Multi-zone reactor, system including the reactor, and method of using the same

ABSTRACT

Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 14/656,588, now U.S. Pat. No. 10,276,355, filed on Mar. 12, 2015,and entitled “MULTI-ZONE REACTOR, SYSTEM INCLUDING THE REACTOR, ANDMETHOD OF USING THE SAME,” the disclosure of which is incorporatedherein by reference.

FIELD OF DISCLOSURE

The present disclosure generally relates to gas-phase reactors andsystems. More particularly, the disclosure relates to multi-zonegas-phase reactors, suitable for, e.g., spatial processing, to systemsincluding the reactors, and to methods of using the same.

BACKGROUND OF THE DISCLOSURE

Gas-phase processes, such as chemical vapor deposition (CVD),plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), atomic layeretch (ALE), and the like are often used to deposit materials onto asurface of a substrate, etch materials from a surface of a substrate,and/or clean or treat a surface of a substrate. For example, gas-phaseprocesses can be used to deposit or etch layers on a substrate to formsemiconductor devices, flat panel display devices, photovoltaic devices,microelectromechanical systems (MEMS), and the like.

Typically, multiple gas-phase processes are used to form such devices.Often, each process is carried out in its own reaction chamber, whichmay be a stand-alone chamber, or the chamber may be part of a clustertool. Dedicating a reaction chamber to each process is desirable toprevent or mitigate cross contamination of reactants used or productsformed within the reaction chamber. However, using dedicated reactionchambers requires significant capital costs and increases operatingcosts associated with making the devices. In addition, processingsubstrates in different reaction chambers often requires a vacuum and/orair break to remove a substrate from one reaction chamber and place thesubstrate in another reaction chamber.

In the case of ALD and ALE processes, multiple precursors are generallyindividually and sequentially introduced into a reaction chamber. Purgeand/or exhaust steps are typically used to purge one precursor prior tointroduction of another precursor. In other words, the precursors areintroduced at different times to a reaction chamber to prevent unwantedmixing of the precursors. This is known as temporal processing. Althoughthe introduction of different precursors is separated by time in suchprocesses, the precursors can still undesirably mix and/or react,resulting in unwanted deposition within the reaction chamber and/orundesired particle formation.

To address these issues, spatial gas-phase reactors have been developed.Typical spatial gas-phase reactors include two or more processingregions coupled together along a horizontal direction, such thatsubstrates can move from one processing region to another along ahorizontal plane—e.g., along a conveyor or a turntable. Although thesesystems solve some problems associated with processing substrates inmultiple reaction chambers and/or using multiple precursors within onereaction chamber, the systems still suffer drawbacks.

Horizontal transport systems require a significant amount of space,particularly floor space, for each processing region. In addition, thetotal process volume of such a system is relatively large, resulting inlarge purge gas requirements, long purge times, and slow substratemovement to maintain desired gas separation. Additionally, therelatively large processing region volumes can result in unwanted mixingof precursor gases.

In addition, precursor or reactant delivery schemes for horizontaltransport systems are relatively complex. Further, the configuration ofthese systems is relatively inflexible, due at least in part to thetiming requirements for the precursor or purge gas for each processingregion relative to the speed at which the substrate moves. In addition,the mechanics of these systems can be relatively complicated andtherefore such systems can be relatively unreliable and expensive tomaintain.

Accordingly, improved gas-phase reactors, systems, and methods forcarrying out multiple gas-phase processes are desired.

SUMMARY OF THE DISCLOSURE

Various embodiments of the present disclosure relate to multi-zonegas-phase reactors, to systems including the reactors, and to methods ofusing the reactors and systems. While the ways in which the multi-zonegas-phase reactors, systems, and methods of the present disclosureaddress the drawbacks or prior reactors, systems, and methods aredescribed in greater detail below, in general, exemplary multi-zonegas-phase reactors, systems, and methods in accordance with the presentdisclosure include multiple reaction zones in a vertical stack, whichallows reactors and systems to be run in unique ways, allows relativelyfast throughput, employs relatively uncomplicated reactor design, usesrelatively small volume, uses a relatively small amount of space, and/orprovides relatively reliable reactor systems, compared to similar, priorspatial reactors and systems used to perform the same or similarprocesses. For example, exemplary reactors and systems can be used forspatial processing, such as spatial ALD and ALE processing.

In accordance with exemplary embodiments of the disclosure, a multi-zonegas-phase reactor includes a plurality of vertically-stacked reactionzones. Each reaction zone can include one or more gas inlets and/or oneor more exhaust outlets. Processing regions including one or morereaction zones can be used for gas-phase processing and/or purging. Forexample, the reaction zones can be used for a step in an ALD process,for purging, and/or for other gas-phases processes. A load/unload regioncan be a zone. The gas inlets and outlets of adjacent zones can beoffset (e.g., at 30, 60, 90, 120, 135, 180 degrees, or the like) fromone another—e.g., to increase process uniformity and/or reduce a reactorvolume. In accordance with exemplary aspects of these embodiments, a topsurface of a processing region within the multi-zone gas-phase reactorincludes a bottom surface of a movable top plate and a bottom surface ofthe processing region includes a top surface of a movable bottom plate.The top plate can include, for example, a heater, a showerhead, and/orcan form part of a plasma system. The bottom plate can include part of asusceptor assembly, and can be heated, cooled, and/or form part of aplasma unit. Either or both of the top plate and the bottom plate canrotate—either continuously or in an indexed manner—in any reactionzone(s) and/or load/unload region. The top plate and the bottom platecan move independently (rotationally and/or vertically—e.g., along anaxis)—e.g., the movement of either or both can be continuous or indexed.Because the plates can move independently, a volume of a processingregion can be dynamically changed. As a result, a processing region caninclude one or more reaction zones, and can be varied—either betweenprocesses or during processing. For example, a processing region can beenlarged for a purge or clean process and reduced for a deposition oretch process. Alternatively, a processing region can be enlarged for,for example, an ALD or ALE process, and reduced for a purge process. Aprocessing region can be configured in a cross-flow manner and/or caninclude a showerhead gas distribution system for initially vertical flowof one or more gases toward a substrate. A processing region can beconfigured to process a single or multiple substrates. Further, one ormore reaction zones can be coupled to one or more remote plasma unitsthat provide activated species to a processing region. To isolate one ormore processing regions, inert gas flow, alone or in combination with anexhaust can be supplied on one or more sides (top and/or bottom) of aprocessing region—e.g., adjacent to each reaction zone. The reactor canbe used for a variety of processes, including substrate and/or chambertreatment (e.g., plasma treatment, degassing, chlorine scrubbing),deposition (including plasma-enhanced deposition), etch, and/or cleanprocesses.

In accordance with further exemplary embodiments of the disclosure, areactor system includes one or more multi-zone gas-phase reactors asdescribed herein. The reactor systems can also include one or morevacuum sources, one or more reactant/precursor sources, one or moreinert gas sources, control systems, and the like.

In accordance with yet additional exemplary embodiments of thedisclosure, a method (e.g., a method for spatial substrate processing)includes using a multi-zone gas-phase reactor having a plurality ofvertically stacked reaction zones. The method can include the steps ofproviding a multi-zone gas-phase reactor, providing a substrate, movingthe substrate in a vertical direction to a processing region including afirst reaction zone, and exposing the substrate to a first process usingthe first reaction zone. The first process can include any suitableprocess, such as a process noted above. The substrate can be verticallymoved to other reaction regions including one or more other reactionzones within the multi-zone gas-phase reactor for additional processing.For example, in an ALD or similar process, the substrate may be exposedto a first precursor in a first processing region including a firstreaction zone and then be moved to a second processing region includinga second reaction zone and exposed to a second precursor. The substratecan be exposed to a purge gas in reaction zone(s) between the first andsecond reaction zones. In this case, the substrate can move between thefirst and second reaction zones (and any purge reaction zones) until adesired amount of material is deposited or removed. Additionally oralternatively, the substrate may undergo a first process (e.g.,substrate cleaning, etching, purging, or treatment) in a processingregion including a first reaction zone and then be moved to a processingregion including a second reaction zone or other zones for furtherprocessing (e.g., deposition, etch or treatment processing), and so on.Various plasma apparatus can be employed at one or more of the processsteps. Additionally or alternatively, the substrate can be heated,cooled, or left at ambient temperature during one or more processes.Further, one or more substrates can undergo a process at one time. Theone or more substrates can be continuously moved or indexed before,during, or after a process. Gas and/or gas/vacuum curtains can be usedto isolate processing regions (which include one or more reaction zones)or reaction zones. Inert gas valving can be used to rapidly purge gas(e.g., precursor) lines and/or provide isolation to a processing regionsor reaction zones. Various processes can operate in cross flow and/orshowerhead configurations.

Inert gas valving can be accomplished by several methods. One techniqueuses dynamic seals, produced with, for example, inert (e.g., nitrogen)injection-vacuum withdraw-inert (e.g., nitrogen) injection plumbingarrangement, between reaction zones. This arrangement can be furtherimproved by coupling the gas inlets, exhaust and dynamic seals with achanneled shield which allows the bulk of the gas at any blocked levelto easily move around the shield to an exhaust. Another technique ispulsed back suction. Various other inert gas valve arrangements can beemployed to maintain a gas curtain separating reaction zones inaccordance with exemplary embodiments of the disclosure.

Both the foregoing summary and the following detailed description areexemplary and explanatory only and are not restrictive of the disclosureor the claimed invention.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

A more complete understanding of exemplary embodiments of the presentdisclosure can be derived by referring to the detailed description andclaims when considered in connection with the following illustrativefigures.

FIGS. 1(a) and 1(b) illustrate perspective views of a multi-zonegas-phase reactor in accordance with various embodiments of thedisclosure.

FIGS. 2(a) and 2(b) illustrate cross-sectional views of a multi-zonegas-phase reactor, with a processing region including a first reactionzone in accordance with various embodiments of the disclosure.

FIGS. 3(a) and 3(b) illustrate cross-sectional views of a multi-zonegas-phase reactor with a susceptor assembly in a load/unload position inaccordance with various embodiments of the disclosure.

FIG. 3(c) illustrates a portion of a multi-zone gas-phase reactor ingreater detail in accordance with various embodiments of the disclosure.

FIG. 3(d) illustrates another portion of a multi-zone gas-phase reactorin greater detail in accordance with various embodiments of thedisclosure.

FIG. 4 illustrates a susceptor assembly in accordance with additionalexemplary embodiments of the disclosure.

FIGS. 5(a), 5(b) and 5(c) illustrate a multi-zone gas-phase reactorsystem in accordance with further exemplary embodiments of thedisclosure.

FIGS. 6(a), 6(b), 7, 8(a), 8(b), 9(a) and 9(b) illustrate a multi-zonegas-phase reactor suitable for processing multiple substrates inaccordance with further exemplary embodiments of the disclosure.

FIG. 10 illustrates a top surface of a susceptor suitable for processingmultiple substrates in accordance with additional exemplary embodimentsof the disclosure.

FIG. 11 illustrates a perspective view of a susceptor suitable forprocessing multiple substrates in accordance with additional exemplaryembodiments of the disclosure.

FIGS. 12(a), 12(b), 13(a) and 13(b) illustrate another multi-zonegas-phase reactor in accordance with further exemplary embodiments ofthe disclosure.

FIGS. 14 and 15 illustrate integrated gas valve systems in accordancewith exemplary embodiments of the disclosure.

FIGS. 16, 17, 18, 19, 20, 21 and 22 illustrate operation of an exemplarymulti-zone gas-phase reactor in accordance with further exemplaryembodiments of the disclosure.

FIG. 23 illustrates another exemplary multi-zone gas-phase reactor inaccordance with additional exemplary embodiments of the disclosure.

FIG. 24 illustrates an exemplary multi-zone gas-phase reactor with aprocessing region spanning multiple reaction zones in accordance withadditional exemplary embodiments of the disclosure.

FIG. 25 illustrates a multi-zone gas-phase reactor including ashowerhead in accordance with further exemplary embodiments of thedisclosure.

FIG. 26 illustrates a multi-zone gas-phase reactor including agas/vacuum curtain in accordance with additional exemplary embodimentsof the disclosure.

FIG. 27 illustrates a multi-zone gas-phase reactor including a gascurtain in accordance with yet additional exemplary embodiments of thedisclosure.

FIG. 28 illustrates another exemplary multi-zone gas-phase reactor inaccordance with exemplary embodiments of the disclosure.

FIGS. 29-33 illustrate another technique for isolating precursors innearby reactions zones.

It will be appreciated that elements in the figures are illustrated forsimplicity and clarity and have not necessarily been drawn to scale. Forexample, the dimensions of some of the elements in the figures may beexaggerated relative to other elements to help to improve theunderstanding of illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS OF THE DISCLOSURE

The description of exemplary embodiments provided below is merelyexemplary and is intended for purposes of illustration only; thefollowing description is not intended to limit the scope of thedisclosure or the claims. Moreover, recitation of multiple embodimentshaving stated features is not intended to exclude other embodimentshaving additional features or other embodiments incorporating differentcombinations of the stated features.

As set forth in more detail below, various embodiments of the disclosurerelate to multi-zone gas-phase reactors and reactor systems that includea multi-zone gas-phase reactor and to methods of using the multi-zonegas-phase reactors and systems. The multi-zone gas-phase reactors,systems, and methods can be used for a variety of gas-phase processes,such as deposition, etch, clean, and/or treatment processes. By way ofexamples, a multi-zone gas-phase reactor can be used for ALD and/or ALEprocesses, wherein a substrate is exposed to a first precursor in afirst reaction zone, a purge process (e.g., in another reaction zone), asecond precursor in a second reaction zone, and another purge process(e.g., in yet another reaction zone). Other reaction zones can be usedto expose the substrate to a purge gas. One or more processes can beperformed in the same multi-zone gas-phase reactor, without an air orvacuum break. As set forth in more detail below, exemplary reactors,systems, and methods allow for relatively fast processing of substrates,require a relatively small footprint, allow for a variety of reactionprocessing region configurations (e.g., including one or more reactionzones), have processing regions and lines that can be purged relativelyquickly, are relatively reliable, and/or have relatively simpleprecursor and/or reactant supply schemes.

FIGS. 1(a) and 1(b) illustrate an exterior and FIGS. 2(a) to 3(d)illustrate additional views of a multi-zone gas-phase reactor 100 inaccordance with exemplary embodiments of the disclosure. Multi-zonegas-phase reactor 100 includes one or more gas inlets, which in theillustrated example, include diffusers 102-114, one or more exhaustoutlets, illustrated as collectors 116-128, a gate valve 130 for loadingand unloading substrates, a top plate 202, a susceptor assembly 206,including a susceptor or plate 204, and conduits 132, 134 for, e.g.,providing electrical and/or gas lines to portions of multi-zonegas-phase reactor 100.

Multi-zone gas-phase reactor 100 is illustrated with sevenvertically-stacked reaction zones, wherein each reaction zone includes agas inlet and an exhaust outlet. Multi-zone gas-phase reactors inaccordance with other examples of the disclosure can include anysuitable number of reaction zones. By way of examples, multi-zonegas-phase reactors can include 2-20, 2-15, 2-13, or 2-11 reaction zones.Further, although each reaction zone is illustrated with a gas inlet anda gas outlet, in some cases, the reaction zone may only include a gasoutlet or a gas inlet. A height of a reaction zone can vary according todesired reactions. By way of some examples, e.g., in the case of ALD orALE processing, a height of a reaction zone can be from about 0.1 mm toabout 20, about 0.2 mm to about 10 mm, about 0.2 mm to about 0.5 mm, orbe about 5 mm to about 10 mm. Flowrates, temperatures, and operatingpressures within each reaction zone can also vary according to desiredreactions and can include flowrates, pressures, and temperaturestypically used for processing substrates. By way of examples, pressurescan range from about 100 mtorr to about 50 torr, temperatures can rangefrom about 100° C. to about 700° C., and flowrates (e.g., for purgegasses and/or precursor gasses) can range from about 10 sccm to about 10slm.

A movable processing region 208 includes one or more reaction zones. Inthe illustrated example, processing region 208 includes a bottom surfaceof top plate 202 and an upper surface of susceptor assembly 206 (e.g.,an upper surface of plate or susceptor 204). FIGS. 2(a) and 2(b)illustrate processing region 208 in an upper region of multi-zonegas-phase reactor 100. In this case, processing region 208 includes agas inlet 209, an exhaust outlet 210, bottom surface 212 of plate 202and top surface 214 of susceptor 204.

Top plate 202 (also referred to herein as movable plate) can include asolid or permeable plate. In accordance with some embodiments of thedisclosure, top plate 202 includes a showerhead. In accordance withadditional or alternative embodiments, top plate 202 can include part ofa direct plasma system—e.g., top plate 202 can form all or part of anelectrode of the direct plasma system. In accordance with variousaspects of these embodiments, top plate 202 can be heated, be cooled, beat ambient temperature, and/or run under isothermal conditions. As bestillustrated in FIGS. 2(b) and 3(b), multi-zone gas-phase reactor 100 caninclude a shield 216 coupled to top plate 202. Shield 216 helps isolateprocessing region 208 from other zones or regions within multi-zonegas-phase reactor 100. In accordance with other exemplary embodiments, areactor, such as a multi-zone gas-phase reactor described herein caninclude guide 2802, 2812 and guide pads 2804 and/or guide bearings 2806to guide shields 2808, 2810, as illustrated in FIG. 28 .

Bottom plate 204 (also referred to herein as susceptor 204) can beheated, be cooled, be at ambient temperature, and/or run underisothermal conditions. Additionally or alternatively, bottom plate 204can form part of a direct plasma system—e.g., bottom plate 202 can formall or part of an electrode of the plasma system. Multi-zone gas-phasereactor 100 can also include a shield 218 coupled to susceptor 204 tohelp isolate processing region 208 from other zones or regions withinmulti-zone gas-phase reactor 100.

Turning now to FIGS. 3(a) and 3(b), a portion of reactor 100 isillustrated with bottom plate 204 in a load/unload position. Top plate202 can also be in a load/unload position to facilitate fasterload/unload times. In this configuration, multi-zone gas-phase reactor100 can receive a substrate or a substrate can be unloaded frommulti-zone gas-phase reactor 100 from or to, for example, a wafertransfer station that may suitably be under vacuum conditions.

FIGS. 3(c) and 3(d) illustrate one exemplary technique to couplecollectors (e.g., collectors 116-128) to an exterior of multi-zonegas-phase reactor 100. The same or similar technique can be used tocouple diffusers 102-114 to an exterior of multi-zone gas-phase reactor100. In the illustrated example, O-rings 302, 304 are used to form aseal between collector 128 and exterior 310 of multi-zone gas-phasereactor 100. Exterior 310 can include O-ring grooves 312, 314 to receiveO-rings 302, 304. A space 303 between O-rings 302, 304 can be vacuumpumped to form a static seal.

FIG. 4 illustrates susceptor assembly 206 in greater detail. Susceptorassembly 206 is designed to hold a substrate (e.g., a semiconductorwafer) in place during processing. Susceptor assembly 206 includessusceptor 204 and a member 402 mechanically coupled to susceptor 204.Member 402 can be a conduit through which heating and/or cooling linesare inserted. Further, member 402 and susceptor 204 can be rotatablycoupled, such that subsector 204 can rotate (either continuously orindexed) during substrate processing and/or substrate loading orunloading.

FIGS. 5(a) to 5(c) illustrate a system 500 including a plurality ofmulti-zone gas-phase reactors 502, 504, and a substrate transfer station506. For illustration purposes, system 500 is illustrated with twomulti-zone gas-phase reactors 502, 504. However, systems in accordancewith this disclosure can include any suitable number of multi-zonegas-phase reactors. For example, wafer transfer station 506 can coupleto, for example, two, four, five, six, or eight multi-zone gas-phasereactors, and one or more substrate load/unload areas. Substrates can besimultaneously loaded into respective load/unload areas of multi-zonegas-phase reactors 502, 504 and/or other such reactors.

Multi-zone gas-phase reactors 502, 504 can be the same or similar tomulti-zone gas-phase reactor 100 or any other multi-zone gas-phasereactors described herein. In the illustrated example, each multi-zonegas-phase reactor 502, 504 includes a plurality of diffusers. Multi-zonegas-phase reactor 502 includes diffusers 508-520 and multi-zonegas-phase reactor 504 includes diffusers 522-534. Similarly, eachmulti-zone gas-phase reactor 502, 504 includes a plurality ofcollectors. Collectors 536-548 of multi-zone gas-phase reactor 504 areillustrated in FIG. 5(b). Each reactor can also include a gate valveload area 550.

Similar to multi-zone gas-phase reactor 100, multi-zone gas-phasereactors 502, 504 include top plates 552, 554, which may be the same orsimilar to top plate 202, and bottom plates 556, 558, which may be thesame or similar to susceptor 204. Top plates 552 and 554 can move inunison or independently from each other and/or their respective bottomplates/susceptors 556, 558.

Turning now to FIGS. 6(a) to 9(b), a multi-zone gas-phase reactor 600suitable for simultaneously processing a plurality of substrates isillustrated. Multi-zone gas-phase reactor 600 can be the same or similarto multi-zone gas-phase reactor 100, 502, or 504, although multi-zonegas-phase reactor 600 can be scaled to simultaneously process aplurality of substrates, such as 2, 3, 4, 5, 6, 7 or 8 substrates.Multi-zone gas-phase reactor 600 can be a stand-alone reactor or part ofa system, such as system 500. Reactor 600 includes a load/unload area630, which is configured to allow loading/unloading of substrates intoor out of reactor 600.

Similar to the reactors described above, multi-zone gas-phase reactor600 includes a plurality of diffusers 602-614 and a plurality ofcollectors 616-628. Diffusers 602-614 and collectors 616-628 can be thesame or similar to other diffusers and collectors described herein;however, diffusers 602-614 and collectors 616-628 are scaled tosimultaneously process multiple substrates within a processing region.

Multi-zone gas-phase reactor 600 includes a top plate 702 having ashield 706 associated therewith and a bottom plate/susceptor 704 havinga shield 708 associated therewith. Associated shields 706, 708 move withand can be coupled to respective plates 702, 704 to help isolate aprocessing region 720. For example, if multi-zone gas-phase reactor 600includes n reaction zones, shields 706, 708 extend over n−1, n−2, n−3,n−4, or the like reaction zones. In the illustrated example, shields706, 708 extend over n−1 zones.

Multi-zone gas-phase reactor 600 includes recesses 712, 714 to receiveshields 706, 708. Recesses 712, 714 extend to allow plates to a bottomposition (e.g., a load/unload position) and a top position (e.g., toserve as a top plate in or above a top reaction zone within reactor600). Multi-zone gas-phase reactor 600 also includes inserts 716, 718.Inserts 716, 718 can form part of recesses 712, 714. Inserts 716, 718reduce an interior volume of reactor 600, while allowing use of shield706, 708. Reducing reactor 600 interior volume is beneficial, becausepump-down times to obtain desired vacuum conditions can be reduced.

FIGS. 7, 9 (a) and 9(b) illustrate processing region 720 in a topreaction zone. FIGS. 8(a) and 8(b) illustrate processing region 720 in abottom reaction zone.

FIGS. 10 and 11 illustrate a susceptor assembly 1100, includingsusceptor 704, for processing a plurality of substrates. Susceptorassembly 1100 can be the same or similar to susceptor assembly 206,except a susceptor assembly 1100 includes a susceptor 704 that has a topsurface 1002, which can hold two or more substrates in place duringprocessing. Susceptor assembly 1100 also includes a member 1102mechanically coupled to susceptor 1004. Member 1102 can include aconduit through which heating and or cooling lines are inserted or be asolid member. Member 1102 and susceptor 704 can be rotatably coupledtogether, such that subsector 704 can rotate during substrate processingand/or loading and unloading.

FIGS. 12(a) to 13(b) illustrate another multi-zone gas-phase reactor1200. Multi-zone gas-phase reactor 1200 is similar to multi-zonegas-phase reactors 100, 502, 504, 600, except multi-zone gas-phasereactor 1200 is illustrated with 11 reaction zones, each reaction zoneincluding a diffuser (e.g., one of diffusers 1202-1224) and a collector(e.g., one of corresponding collectors 1226-1246). Similar to themulti-zone gas-phase reactors described above, multi-zone gas-phasereactor 1200 includes top plate 1302, bottom plate 1304, shields 1306,1308, and a load/unload area 1248. In the illustrated case, shields1306, 1308 extend over at least one adjacent reaction zone.

Turning now to FIGS. 14 and 15 , exemplary integrated gate valve (IGV)assemblies 1400 and 1500 are schematically illustrated. As noted above,IGV assemblies can be used to isolate a processing region or reactionzone from other reaction zones and/or other regions within a reactor.IGV assemblies can be coupled to an inlet of a diffuser, such as any ofthe diffusers described herein. Generally, exemplary IGV assemblies asdescribed herein provide desired isolation between reaction zones orregions via selection of pump and/or back suction conductance and/orpump speeds.

IGV assembly 1400 includes inlet precursor valve 1402, exhaust precursorvalve 1404 (e.g., a back suction valve connected to an exhaust source),and inert gas inlets 1408 and 1410. As illustrated, inert gas inlets1408, 1410 can provide inert gas (e.g., nitrogen, argon, or the like) ina direction toward a reaction zone inlet 1412 and toward exhaust valves1414, 1416, which can suitably include back suction valves. Thisfacilitates purging of a precursor line 1418 and mitigates mixing withother precursor lines 1420, 1422. As illustrated, assembly 1400 caninclude additional inert gas inlets 1424, 1426 for precursor lines 1420and 1422, respectively.

IGV assembly 1500 includes a precursor inlet valve, inert gas valves1504-1510, and exhaust valve 1512. During operation of IGV assembly1500, when a precursor is introduced to a reaction zone inlet 1514,precursor valve 1502 and inert gas valves 1504, 1508 (e.g., low-flowvalves) are on to provide an additional barrier to nearby reaction zonesand the like. To purge a precursor line 1516, valves 1506 and 1510 canbe opened to provide additional inert gas flow. In accordance with someaspects of these embodiments, valves 1502 and 1512 can be left on oropen during processing, because the primary exhaust for a reaction zonecan be the highest conductance and thus when a shield (e.g., shield 1306or the like) does not block a precursor from entering a reaction zone,the precursor flows across a substrate and a small amount of theprecursor will flow to an exhaust (e.g., through valve 1512). When aninlet is blocked—e.g., by a shield, a gas flow resistance is highenough, so that all or most of the precursor, along with purge gasesfrom above and/or below, will flow directly to the exhaust and not to areaction chamber.

FIGS. 26 and 27 illustrate additional exemplary reactors that include agas curtain to facilitate isolation of a reaction zone or processingregion from other zones or regions of a reactor. Reactor 2600 includesprecursor inlets 2602, 2604 (which correspond to different reactionregions), inert gas inlets 2606-2612, a movable plate 2614, and asusceptor 2616, which can be part of a susceptor assembly. Duringoperation of reactor 2600, inert gas flows as indicated by therespective arrows to provide a gas curtain. The inert gas flows frominlets 2606-2612 toward an exhaust 2618.

Reactor 2700 includes inert gas inlets 2702, 2704. In the illustratedexample, an inert gas enters gas inlet 2702, runs through a conduit 2706coupled to a movable plate 2708, and continues to flow between asidewall 2712 and a shield 2710 to an exhaust 2714. Similarly, an inertgas (which can be the same or similar to the inert gas in conduit 2706)flows from inlet 2704 through a conduit 2716, which can be coupled to asusceptor 2718, and continues to flow between a sidewall 2720 and ashield 2722 to an exhaust 2724, which can be the same as exhaust 2714.The inert gas flow, as illustrated by the arrows, provides a gas curtainto facilitate isolation between reaction zones and/or regions.

FIGS. 29-33 illustrate another technique for isolating precursors innearby reactions zones. In the illustrated example, a reactor 2900includes a plurality of reaction zones 2902-2920, 2921, and 2923.Similar to other reactors described herein, reactor 2900 includes a topplate 2922, a bottom plate 2924, and shields 2926, 2928. Althoughillustrated with a precursor reaction zone surrounded on each side bytwo precursor reaction zones, exemplary reactors are not so limited.Other reactors can include one or more purge reaction zones adjacent aprecursor reaction zone.

Reaction zones 2904, 2910, and 2916 can be used to expose a substrate toa precursor—e.g., a precursor used in CVD processing, such as an ALD orALE process. One or more (e.g., two) purge reaction zones 2902, 2906,2908, 2912, 2914, 2918, 2920 are adjacent each precursor reaction zone2904, 2910, and 2916. Using one or more purge reaction zones 2902, 2906,2908, 2912, 2914, 2918, 2920 adjacent precursor reaction zones 2904,2910, and 2916 provides isolation of one or more precursors from otherprecursors used in nearby reaction zones. It is generally desirable tohave separation of the gasses, and particularly of the precursors toprevent undesirable mixing of the gases. Mixing of the precursors, forexample in one or more purge reaction zones 2902, 2906, 2908, 2912,2914, 2918, 2920, may cause particles to form in those regions.

Some purge gas from purge reaction zones 2902, 2906, 2908, 2912, 2914,2918, 2920 may leak into nearby precursor reaction precursor reactionzones 2904, 2910, and 2916. Generally, there is a tendency for morepurge gas to leak into a precursor reaction zone 2904, 2910, and/or2916, where the purge gas pressure is highest—e.g., near an inlet of thepurge gas. To increase gas (e.g., precursor separation), purge gas(e.g., in purge reaction zones 2902, 2906, 2908, 2912, 2914, 2918, 2920)can be introduced at an angle offset from the angle of introduction ofthe precursor gasses. For example, the inlets and corresponding outletsfor the precursor gasses and the inlets and corresponding outlets forthe purge gasses can be offset by 30, 45, 60, 90, 120, 135, 180, or anycombination of such degrees or other degrees. Introducing the purgegasses from another direction may increase dilution of a precursorwithin a precursor reaction zone 2904, 2910, and/or 2916, but generallyreduces potential of undesired mixing of the precursors. To provideadditional isolation, precursors not in use in a reaction zone can beturned off.

By way of example, with reference to FIG. 29 , a substrate 2930 isexposed to a first precursor “B” in reaction zone 2910. In this case,precursor “A” is turned off (e.g., a valve is closed), and purge linesto purge reaction zones 2902, 2906, 2908, 2912, 2914, 2918, 2920 are on.Alternatively, purge lines to one or more adjacent purge reaction zonesare on and other purge lines can be off.

With reference to FIG. 30 , as top plate 2922 and bottom plate 2924 moveupward, shield 2928 and purge gas from zones 2912, 2914, 2906, and 2906block precursor “B” from entering nearby reaction zone 2904 and/or 2916.

As substrate 2930 continues to move upward in reactor 2900, substrate2930 is exposed to a first purge in reaction zone 2912, as illustratedin FIG. 31 . In this case, adjacent precursors “A” and “B” can be turnedoff, as shown. Substrate 2930 can then be exposed to a second purge inreaction zone 2914, as illustrated in FIG. 32 .

Substrate 2930 can then be exposed to precursor “A” in reaction zone2916, while precursor “B” is off, as illustrated in FIG. 33 . Purgereaction zones 2918, 2920 and 2912, 2914 provide additional isolationto, for example, reaction zones 2910 and 2921.

During substrate processing, top plate 2922 and bottom plate 2924 canmove continuously through reactor 2900 from a load/unload area thoughthe reaction zones 2902-2923. An acceleration of the plates (without avacuum chuck) can be about 0.67 g. By way of particular example, a unitcell can be defined as a purge reaction zone, a first precursor reactionzone, two adjacent purge reaction zones, a second precursor reactionzone, and another purge zone can be about 80 mm in height. In this case,a time to travel through a unit cell can be about 280 ms. With a vacuumchuck and 3 g acceleration, the travel time could be reduced to about130 ms. If top plate 2922 and bottom plate 2924 move in an indexedfashion, the time to traverse a unit cell would generally increase.

Turning now to FIGS. 16-22 , an exemplary method of using a multi-zonegas-phase reactor is illustrated. The method is conveniently illustratedusing a reactor 1600, which includes a movable susceptor assembly 1602,a movable plate 1604, a gate valve opening 1606, and reaction zones1702, 1802, 1902, 2002, and 2102. Although not illustrated in FIGS.16-22 , reactor 1600 can include shields and/or IGV assemblies asdescribed and illustrated elsewhere.

During operation of reactor 1600, a substrate 1608 is loaded onto a topsurface 1610 of a susceptor 1612. As illustrated, substrate 1608 can beloaded onto and/or removed from susceptor 1612 using lift pins 1614,1616, which go through at least a portion of susceptor 1612. Oncesubstrate 1608 is loaded onto susceptor 1612, gate valve 1606 is closed.

Substrate 1608 can be moved to a processing region including reactionzone 1702 by moving susceptor assembly 1602 and movable plate 1604 toreaction zone 1702 positions. As noted above, susceptor assembly 1602and movable plate 1604 can move together or move independently topositions for various reaction zones, processing regions, andload/unload positions.

A processing region including reaction zone 1702 can be used for variousprocesses, including cleaning or treatment of a substrate surface. Forexample, hydrogen gas and/or ammonia gas can be used to treat a surfaceof a substrate in a processing region including reaction zone 1702.Reactant can enter from an inlet 1704 and/or from top plate 1604. Thereactant can include activated species and/or can be exposed to a plasmaprocess.

Next, substrate 1608 is moved to a processing region including reactionzone 1802. As illustrated, susceptor assembly 1602 can rotate duringprocessing in a processing region including reaction zone 1802 (oranywhere in reactor 1600, including the loading/unloading zone). By wayof example, a first precursor for an ALD deposition process can beintroduced at an inlet 1804. At a processing region including a reactionzone 1902, a second precursor can be introduced at inlet 1904. First andsecond precursors can be used for, for example, ALD or ALE processing.

At a processing region including a reaction zone 2002, substrate 1608 isexposed to the first precursor (or another precursor). As illustrated,the precursor can be introduced at an opposite side of reactor 1600.Introducing reactants or other gases at various locations for variousreaction zones can facilitate uniform gas-phase processes, such asdeposition, etch, clean, and treatment processes. Introducing reactantsat various locations can also facilitate reactor design (e.g., reactorshaving less volume). As noted above, inlets and/or outlets of a reactorcan be offset by, for example, 30, 45, 60, 90, 120, 135, or 180 degrees.

Substrate 1608 is exposed to another precursor from gas inlet 2104 in aprocessing region including reaction zone 2102. The precursor can be thesame or different from the precursor used in reaction zone 1902.

Substrate 1608 can suitably be moved between reaction zones 1702-2102 adesired number of times—for example, until a desired amount of materialis deposited or removed. Susceptor assembly 1602 can then be lowered toa load/unload position 1620, illustrated in FIG. 16 .

FIG. 22 illustrates susceptor 1612 in a low position (e.g., aload/unload position) and movable plate 1604 in a high position (e.g.,reaction zone 1702 position or above). When movable plate 1604 andsusceptor 1612 are in these positions, a processing region 2202,including reaction zones 1702-2102 can be cleaned or treated. Forexample, region 2202 can be exposed to a direct and/or remote plasmaclean or treatment process. Although region 2202 is illustrated asencompassing reaction zones 1702-2102, susceptor 1612 and movable plate1604, a processing region can encompass any of one or more reactionzones 1702-2102 during such processing. Similarly, movable plates andsusceptors of other reactors described herein can be moved to similarlocations to create such processing regions.

Another feature of exemplary multi-zone gas-phase reactors as describedherein is the ability to apply an alumina or similar coating to areas ofthe reactor—e.g., to one or more reaction zones (e.g., zones 1702-2102or any subset thereof). The alumina can serve as a barrier layer to thereactor surfaces for minimizing potential metallic contamination. Thealumina coat can also be used to cap any undesirable film formation onthe reactor walls in order to improve reactor lifetime. The alumina coatcan also improve the ability to clean and refurbish the reactor.

FIGS. 23-25 illustrate additional exemplary configurations of exemplaryreactors in accordance with this disclosure. FIG. 23 illustrates amulti-zone gas-phase reactor 2300 including seven reaction zones2302-2314 and a load/unload zone 2330.

During operation of multi-zone gas-phase reactor 2300, a substrate 2316is loaded onto a susceptor 2318 of a susceptor assembly 2320 via a gasvalve opening 2322. Substrate 2316 can be moved to various processingregions including one or more reaction zones 2302-2314, by movingsusceptor assembly 2320 and a movable plate 2324. In the illustratedexample, substrate 2316 is exposed to a first precursor in a processingregion including reaction zone 2302, a purge gas in a processing regionincluding reaction zone 2304, a second precursor in a processing regionincluding reaction zone 2306, a purge gas in a processing regionincluding reaction zone 2308, the first precursor in a processing regionincluding reaction zone 2310, a purge gas in a processing regionincluding reaction zone 2312, and the second precursor in a processingregion including reaction zone 2314. Substrate 2316 can be moved betweenprocessing regions including reaction zones 2302-2314 a desired numberof times—e.g., until a desired amount of material is deposited orremoved from a surface of substrate 2316.

FIG. 24 illustrates another exemplary reactor configuration. Multi-zonegas-phase reactor 2400 includes reaction zones 2402-2410. In theillustrated example, a reaction processing region 2430 includes tworeaction zones 2408, 2410 between a movable plate 2412 and a susceptor2414. In this case, a first gas and a second gas can be introducedbetween a bottom surface 2420 of movable plate 2412 and a top surface2422 of a susceptor 2414. The first and second gases 2416, 2418 can beintroduced simultaneously or sequentially. For example, first and secondprecursor gases can be introduced simultaneously during a CVD process.One or more of the first and second gases can include an inert gas.Although illustrated with two gas inlets, reaction zones and/orprocessing regions of multi-zone gas-phase reactors as described hereincan include any suitable number of gas inlets, for reactants, carrier,and/or purge gases.

Reactor 2500 is illustrated with one reaction zone 2502, a movable plate2504, which includes a showerhead gas distribution apparatus 2506, asusceptor assembly 2508, and a load/unload zone 2510. Movable plateand/or movable susceptor assembly 2808 allows for variable gap controlof reaction zone 2502. Gas distribution apparatus 2506 can form part ofa direct plasma system. In the illustrated example, reactor 2500 allowsfor both cross flow and vertical flow of gases. This provides analternate means of keeping precursors separated to avoid mixing andresulting particle generation. A precursor with the highest desirabledegree of flux uniformity can be distributed through showerhead gasdistribution apparatus 2506, while another precursor can be deliveredvia the cross-flow path.

Although illustrated with one reaction zone 2502, reactors in accordancewith other exemplary embodiments can include a showerhead gasdistribution apparatus and any suitable number of reaction zones.

Although exemplary embodiments of the present disclosure are set forthherein, it should be appreciated that the disclosure is not so limited.For example, although the reactors, reactor systems, and methods aredescribed in connection with various specific configurations, thedisclosure is not necessarily limited to these examples. Indeed, unlessotherwise noted, features and components of various reactors and systemsdescribed herein can be interchanged. Various modifications, variations,and enhancements of the reactors, systems, and methods set forth hereinmay be made without departing from the spirit and scope of the presentdisclosure.

The subject matter of the present disclosure includes all novel andnonobvious combinations and subcombinations of the various systems,assemblies, reactors, components, and configurations, and otherfeatures, functions, acts, and/or properties disclosed herein, as wellas any and all equivalents thereof.

We claim:
 1. A method of using a multi-zone gas-phase reactor, themethod comprising the steps of: providing the multi-zone gas-phasereactor comprising: a plurality of vertical sidewalls enclosing aninterior space; a plurality of gas inlets formed through a first of theplurality of vertical sidewalls and a plurality of exhaust outletsformed through a second of the plurality of vertical sidewalls that isopposite the first of the plurality of vertical sidewalls; a pluralityof reaction zones within the interior space stacked vertically along theplurality of vertical sidewalls, wherein each of the reaction zonescomprises no more than one of the plurality of gas inlets and no morethan one of the plurality of exhaust outlets; a moveable top platecomprising a bottom surface; and a moveable susceptor assemblycomprising a susceptor having a top surface, wherein the moveable topplate is independently moveable relative to the moveable susceptorassembly, and wherein a moveable processing region is defined betweenthe bottom surface and the top surface; positioning a substrate in themoveable processing region between the bottom surface of the moveabletop plate and the top surface of the susceptor, wherein the susceptor isconfigured to support the substrate; after positioning the substrateinto the moveable processing region, moving the moveable top plate andthe moveable susceptor assembly in a vertical direction, such that themoveable processing region encloses a first reaction zone of theplurality of reaction zones; exposing the substrate to a first processin the first reaction zone; after exposing the substrate to the firstprocess in the first reaction zone, moving the moveable top plate andthe moveable susceptor assembly in the vertical direction, such that themoveable processing region encloses a second reaction zone of theplurality of reaction zones; and exposing the substrate to a secondprocess in the second reaction zone.
 2. The method of using themulti-zone gas-phase reactor of claim 1, wherein moving the moveable topplate includes moving the moveable top plate relative to the top surfaceof the susceptor to change the volume of the moveable processing region.3. The method of using the multi-zone gas-phase reactor of claim 1,wherein the step of, after exposing the substrate to the first processin the first reaction zone, moving the moveable top plate and themoveable susceptor assembly in the vertical direction causes themoveable processing region to encompass both the second reaction zoneand a third reaction zone differing from the first reaction zone.
 4. Themethod of using the multi-zone gas-phase reactor of claim 1, wherein atleast one of the plurality of vertically-stacked reaction zonescomprises an atomic layer deposition reaction zone.
 5. The method ofusing the multi-zone gas-phase reactor of claim 1, wherein the moveabletop plate comprises a showerhead.
 6. A method comprising: positioning asubstrate in a processing region defined between a moveable top plate, amoveable susceptor, and sidewalls of a reactor, wherein the moveablesusceptor is configured to hold the substrate, wherein the moveablesusceptor forms a bottom surface of the processing region and themoveable top plate forms a top surface of the processing region, whereinthe sidewalls of the reactor comprise a plurality of vertically-spacedgas inlets and a plurality of vertically-spaced exhaust outlets; first,moving the moveable top plate and the moveable susceptor in a verticaldirection to position the processing region so as to include one of theplurality of gas inlets and one of the plurality of exhaust outlets;exposing the substrate to a first process; second, moving the moveabletop plate and the moveable susceptor in the vertical direction toposition the processing region so as to include a different gas inlet ofthe plurality of gas inlets and a different exhaust outlet of theplurality of exhaust outlets; and exposing the substrate to a secondprocess.